Equipment&Charges (2021.4.1〜)
■Microstructural Characterization
■Nanofabrication(MEMS)
※All charges listed here are including tax.
Microstructural Characterization (Analytical Research Core for Advanced Materials) | ||
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■Technical support charge: Open project:3,300 yen/hour Classified Project:6,600yen/hour |
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Equipment usage Charges【yen/day(8hours)】 |
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Equipment name |
Open Project |
Classified Project |
JEM-ARM200F |
30,800 | 163,680 |
Topcon EM-002B | 25,520 | 51,920 |
JEOL JEM-2000EXU | 16,720 | 34,320 |
FIB-SEM(Quanta 3D) |
30,360 | 62,920 |
FIB-SEM(Versa 3D) |
30,360 | 62,920 |
JEOL EM-09100IS | 17,600 | 32,560 |
PIPSU | 9,680 | 22,880 |
Model1010 | 3,520 | 13,200 |
X-ray Diffractometer |
6,160 | 32,560 |
Thermoanalysis
|
5,280 | 12,320 |
All charges listed here are including tax.
・Raw chemicals for syntheses are not included.
・All charges listed here are including tax.
Nanofabrication(MEMS) | |||||||
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【Open Project】 ■Technical support fee: 3,300 yen/hour ■Facility usage charge: 960 yen/hour(790 yen/hour for the use within the Universityr ) 【Classified Project】 ■Technical support fee: 6,514 yen/hour ■Facility usage charge: 960 yen/hour(790 yen/hour for the use within the Universityr ) Price List(PDF) |
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No. |
Equipment name |
Open P Charges yen/hour |
Charges
(yen/hour) |
No. |
Equipment name |
Classified P Charges yen/hour |
Charges
(yen/hour) |
A.Cleaning & drying |
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A-1 |
Draft chamber |
1,290 | 1,548 | A-7 |
Spin-drying machine |
2,428 | 2,914 |
A-2 |
Draft chamber for SiN etching |
1,730 | 2,076 | A-8 |
Organic draft chamber |
1,290 | 1,548 |
A-4 |
Inert oven for sintering |
1,710 | 2,052 | A-9 |
4" spin drying machine |
2,612 | 3,134 |
A-5 |
Vacuum oven |
994 | 1,192 | A-10 |
6"spin drying machine |
2,612 | 3,134 |
A-6 |
Brush scrubber |
6,906 | 8,286 | ||||
B.Photolithography |
|||||||
B-2 |
Spin coater |
2,170 | 2,604 | B-13 |
Elionix EB lithography |
9,422 | 11,306 |
B-3 |
Clean oven |
2,830 | 3,396 | B-14 |
Laser writer |
7,094 | 8,512 |
B-4 |
Curing oven |
1,872 | 2,246 | B-15 |
Maskless exposure system for ball |
4,450 | 5,340 |
B-5 |
Double-side aligner |
3,240 | 3,888 | B-16 |
Spin dryer |
2,208 | 2,650 |
B-8 |
Draft chamber for development |
1,290 | 1,548 | B-17 |
Hot plate |
994 | 1,192 |
B-9 |
UV curing |
4,120 | 4,944 | B-18 | maskless aligner | 5,374 | 6,450 |
B-10 |
Spin coater |
2,332 | 2,798 | B-19 | i-line stepper | 14,960 | 29,700 |
B-11 |
Spray developer |
2,156 | 2,588 | B-20 | Coater developer | 6,458 | 13,200 |
C.Oxidation/diffusion, ion injection and heat treatment |
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C-1 |
Oxidation furnace (for semiconductors)) |
10,598 | 12,716 | C-7 |
Annealing furnace |
10,112 | 12,134 |
C-2 |
Oxidation furnace (for MEMS) |
9,168 | 11,000 | C-8 |
Medium-current ion injector |
19,934 | 23,922 |
C-3 |
P diffusion furnace |
11,562 | 13,874 | C-10 |
Rapid thermal annealing |
8,522 | 10,226 |
C-4 |
P push-in furnace |
9,854 | 11,824 | C-11 | Metal diffusion furnace |
7,856 | 9,426 |
C-5 |
B diffusion furnace |
10,938 | 13,126 | ||||
C-6 |
B push-in furnace |
9,854 | 11,824 | ||||
D.Deposition |
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D-1 |
LPCVD(SiN) |
12,108 | 14,530 | D-12 |
MOCVD |
19,484 | 23,382 |
D-2 |
LPCVD(Poly-Si) |
11,838 | 14,206 | D-13 |
JPEL PECVD |
15,156 | 18,188 |
D-3 |
LPCVD(SiO2) |
12,808 | 15,368 | D-14 | TEOS PECVD |
16,904 | 20,286 |
D-4 |
CVD |
21,326 | 25,590 | D-15 | Automatic Shibaura sputtering |
6,524 | 7,828 |
D-5 |
SUMITOMOSEIMITU PECVD |
15,350 | 18,420 | D-16 |
Sputtering for ball |
4,392 | 5,270 |
D-6 |
W-CVD |
9,818 | 11,782 | D-17 | ALD |
10,418 | 12,502 |
D-7 |
ANELVA sputtering equipment |
8,588 | 10,306 | D-18 |
High-temp. sputtering and O2 annealing |
11,698 | 14,038 |
D-8 |
SHIBAURA sputtering equipment |
3,758 | 4,510 | D-20 |
ECR long-throw sputter | 6,450 | 7,740 |
D-9 |
Electron beam evaporator |
6,838 | 8,206 | D-21 |
SPP Technologies TEOS PECVD | 16,770 | 21,507 |
D-10 |
Sol-gel auto-deposition system |
8,066 | 9,680 | ||||
D-11 |
Plating equipment |
2,534 | 3,040 | ||||
E.Etching |
|||||||
E-1 | DeepRIE #1 |
8,054 | 9,666 | E-12 |
TMAH etching equipment |
3,112 | 3,734 |
E-2 |
DeepRIE #2 |
8,054 | 9,666 | E-13 |
DeepRIE #4 |
14,770 | 17,724 |
E-3 |
DeepRIE #3 |
8,278 | 9,934 | E-14 |
Ion milling |
11,360 | 13,632 |
E-4 |
ANELVA RIE equipment |
7,078 | 8,494 | E-15 |
Vapor HF etching |
8,534 | 10,240 |
E-5 |
ANELVA Si RIE equipment |
6,346 | 7,616 | E-16 |
Ulvac ICP-RIE#1 |
15,970 | 19,166 |
E-6 |
Al-RIE |
11,912 | 14,294 | E-17 |
Chemical Dry Etcher (CDE) |
5,976 | 7,172 |
E-7 |
ULVAC ashing equipment |
4,066 | 4,880 | E-18 |
Plasma cleaner |
3,198 | 3,838 |
E-8 |
BRANSON ashing equipment |
3,316 | 3,980 | E-19 |
Ulvac ICP-RIE#2 |
15,684 | 18,820 |
E-10 |
ULVAC multi-purpose RIE equipment |
10,902 | 13,082 | ||||
E-11 |
KOH etching equipment |
3,100 | 3,722 | ||||
F.Bonding, polishing and packaging |
|||||||
F-1 |
Wafer bonding equipment |
5,946 | 7,134 | F-9 |
EVG wafer bonder |
6,112 | 7,336 |
F-2 |
TOKYO SEIMITSU dicer |
9,656 | 11,588 | F-10 |
EVG aligner for wafer bonding |
5,302 | 6,362 |
F-3 |
DISCO dicer |
2,646 | 3,176 | F-11 |
UV imprint |
6,638 | 7,964 |
F-4 |
Wire bonder |
1,186 | 1,424 | F-12 |
Thermal imprint |
5,900 | 7,080 |
F-5 |
Laser marker |
2,436 | 2,922 | F-13 |
Excimer lamp cleaner |
2,700 | 3,240 |
F-6 |
6-inch wafer polishing equipment |
2,120 | 2,544 | F-14 |
Surface planer |
14,974 | 17,968 |
F-7 |
4-inch wafer polishing equipment |
1,822 | 2,186 | F-15 |
Shibuya LAMICS AQL-1900 |
8,018 | 9,622 |
F-8 |
Sand blast |
3,418 | 4,102 | ||||
G.Measurement |
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G-1 |
Wafer dust detector |
1,976 | 2,372 | G-15 |
Ultrasonic microscope |
2,284 | 2,742 |
G-2 |
Film thickness gage |
1,384 | 1,662 | G-16 |
Digital thermo microscope |
1,248 | 1,496 |
G-3 |
Dektak step profiler |
1,658 | 1,990 | G-17 |
Infrared microscope |
1,236 | 1,482 |
G-4 |
Tenchor step profiler |
1,658 | 1,990 | G-18 |
Quadrupole mass analyzer |
1,226 | 1,472 |
G-5 |
Depth measuring equipment |
1,074 | 1,290 | G-20 |
Quick coater |
1,338 | 1,606 |
G-6 |
4-probe measuring equipment |
1,076 | 1,290 | G-22 |
Desktop Ellipsometer |
746 | 896 |
G-7 |
Spreading resistance profiler |
2,616 | 3,140 | G-24 |
Laser/white light conforcal microscope |
4,728 | 5,674 |
G-8 |
Wafer prober |
2,666 | 3,198 | G-25 |
Line-focus-beam acoustic microscope for material characterization #1 |
3,488 | 4,184 |
G-9 |
Metal microscope |
1,152 | 1,382 | G-26 |
Line-focus-beam acoustic microscope for material characterization #2 |
3,488 | 4,184 |
G-10 |
Digital microscope |
1,540 | 1,848 | G-27 |
FIB |
9,596 | 11,516 |
G-11 |
Thermal electron SEM |
2,632 | 3,158 | G-28 |
XRD |
5,154 | 6,184 |
G-12 |
FE-SEM |
4,622 | 5,546 | G-29 |
JEOL FE-SEM | 5,330 | 6,396 |
G-13 |
Micro X-ray CT |
3,324 | 3,988 | ||||
G-14 |
Ellipsometer |
972 | 1,166 |